Epitaxially Self-Assembled Alkane Layers for Graphene Electronics

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The epitaxially grown alkane layers on graphene are prepared by a simple drop-casting method and greatly reduce the environmentally driven doping and charge impurities in graphene. Multiscale simulation studies show that this enhancement of charge homogeneity in graphene originates from the lifting of graphene from the SiO2 surface toward the well-ordered and rigid alkane selfassembled layers.
Publisher
WILEY-V C H VERLAG GMBH
Issue Date
2017-02
Language
English
Article Type
Article
Keywords

FIELD-EFFECT TRANSISTORS; SCANNING-TUNNELING-MICROSCOPY; BALLISTIC TRANSPORT; SUSPENDED GRAPHENE; RAMAN-SPECTROSCOPY; BORON-NITRIDE; MONOLAYERS; SUBSTRATE; GRAPHITE; MOBILITY

Citation

ADVANCED MATERIALS, v.29, no.5

ISSN
0935-9648
DOI
10.1002/adma.201603925
URI
http://hdl.handle.net/10203/222750
Appears in Collection
EEW-Journal Papers(저널논문)
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