Versatile Transfer of an Ultralong and Seamless Nanowire Array Crystallized at High Temperature for Use in High-Performance Flexible Devices

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dc.contributor.authorSeo, Min-Hoko
dc.contributor.authorYoo, Jae-Youngko
dc.contributor.authorChoi, So-Youngko
dc.contributor.authorLee, Jae Shinko
dc.contributor.authorChoi, Kwang-Wookko
dc.contributor.authorJeong, Chang Kyuko
dc.contributor.authorLee, Keon Jaeko
dc.contributor.authorYoon, Jun-Boko
dc.date.accessioned2017-03-30T09:18:13Z-
dc.date.available2017-03-30T09:18:13Z-
dc.date.created2017-03-29-
dc.date.created2017-03-29-
dc.date.issued2017-02-
dc.identifier.citationACS NANO, v.11, no.2, pp.1520 - 1529-
dc.identifier.issn1936-0851-
dc.identifier.urihttp://hdl.handle.net/10203/222711-
dc.description.abstractNanowire (NW) transfer technology has provided promising strategies to realize future flexible materials and electronics. Using this technology, geometrically controlled, high-quality NW arrays can now be obtained easily on various flexible substrates with high throughput. However, it is still challenging to extend this technology to a wide range of high-performance device applications because its limited temperature tolerance precludes the use of high-temperature annealing, which is essential for NW crystallization and functionalization. A pulsed laser technique has been developed to anneal NWs in the presence of a flexible substrate; however, the induced temperature is not high enough to improve the properties of materials such as ceramics and semiconductors. Here, we present a versatile nanotransfer method that is applicable to NWs that require high temperature annealing. To successfully anneal NWs during their transfer, the developed fabrication method involves sequential removal of a nanoscale sacrificial layer. Using this method, we first produce an ultralong, perfectly aligned polycrystalline barium titanate (BaTiO3) NW array that is heat treated at 700 degrees C on a flexible polyethylene terephthalate (PET) substrate. This high-quality piezoelectric NW array on a flexible substrate is used as a flexible nanogenerator that generates current and voltage 37 and 10 times higher, respectively, than those of a nanogenerator made of noncrystallized BaTiO3 NWs.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.subjectTHIN-FILM-
dc.subjectSEMICONDUCTOR NANOWIRES-
dc.subjectMICROPOROSITY-
dc.subjectFABRICATION-
dc.subjectINTEGRATION-
dc.subjectTEMPLATE-
dc.subjectGROWTH-
dc.titleVersatile Transfer of an Ultralong and Seamless Nanowire Array Crystallized at High Temperature for Use in High-Performance Flexible Devices-
dc.typeArticle-
dc.identifier.wosid000395357300042-
dc.identifier.scopusid2-s2.0-85014246291-
dc.type.rimsART-
dc.citation.volume11-
dc.citation.issue2-
dc.citation.beginningpage1520-
dc.citation.endingpage1529-
dc.citation.publicationnameACS NANO-
dc.identifier.doi10.1021/acsnano.6b06842-
dc.contributor.localauthorLee, Keon Jae-
dc.contributor.localauthorYoon, Jun-Bo-
dc.contributor.nonIdAuthorChoi, So-Young-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthornanowire array-
dc.subject.keywordAuthortransfer-
dc.subject.keywordAuthorcrystallization-
dc.subject.keywordAuthorhigh alignment-
dc.subject.keywordAuthorflexible piezoelectric-
dc.subject.keywordPlusTHIN-FILM-
dc.subject.keywordPlusSEMICONDUCTOR NANOWIRES-
dc.subject.keywordPlusMICROPOROSITY-
dc.subject.keywordPlusFABRICATION-
dc.subject.keywordPlusINTEGRATION-
dc.subject.keywordPlusTEMPLATE-
dc.subject.keywordPlusGROWTH-
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