Thermal resistance effects of packages on LDMOS power amplifier transistor = 패키지의 열저항이 횡방향 확산 금속 산화물 반도체 파워 앰프 트랜지스터에 끼치는 영향에 대한 연구

In this thesis, we studied the effects of package contact thermal resistance on LDMOS power amplifier transistor by combining thermal analysis and circuit analysis. Thermal analysis of the LDMOS power amplifier transistor has been performed by observing the junction temperature changes as the package contact area due to voids. Also, relationships of package contact thermal resistance and power amplifier transistor performance like mobility, threshold voltage, and drain current have been derived by results of thermal analysis and equivalent circuit model. Finally, it has been observed that the performance of the power amplifier transistor worsens as package contact thermal resistance has been increased by RF simulation. It has been found that the amount of change in performance degradation of the test board has been nearly doubled when the amount of change in package thermal resistance to be doubled.
Advisors
Park, Hyun Cheolresearcher박현철researcher
Publisher
한국과학기술원
Issue Date
2016
Identifier
325007
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 정보통신공학과, 2016.8 ,[v, 68 p. :]

Keywords

LDMOS; power amplifier; transistor; thermal resistance; junction temperature; 횡방향 확산 금속 산화물 반도체; 파워 앰프; 트랜지스터; 열저항; 접합 온도

URI
http://hdl.handle.net/10203/222435
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=663221&flag=t
Appears in Collection
ICE-Theses_Ph.D.(박사논문)
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