DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Shin, Mincheol | - |
dc.contributor.advisor | 신민철 | - |
dc.contributor.author | Seo, Junbeom | - |
dc.contributor.author | 서준범 | - |
dc.date.accessioned | 2017-03-29T02:38:05Z | - |
dc.date.available | 2017-03-29T02:38:05Z | - |
dc.date.issued | 2016 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=663434&flag=dissertation | en_US |
dc.identifier.uri | http://hdl.handle.net/10203/221746 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 전기및전자공학부, 2016.8 ,[iv, 43 p. :] | - |
dc.description.abstract | Negative capacitance FETs (NCFETs) are suggested as one of the candidates to overcome the fundamental thermal limit of conventional MOSFETs. In this work, we investigate the basic characteristics of short-channel NCFETs with quantum mechanical transport coupled with Landau-Khalatnikov (LK) equation for modeling the ferroelectric gate stack. In the conventional transistor, potential barrier is lowered with increasing drain voltage, which is a typical drain-induced barrier lowering but in the NCFETs, the potential barrier is raised with drain bias, which we call the drain-induced barrier rising (DIBR). DIBR causes negative differential resistance in output characteristics of NCFETs. DIBR also induces the hysteresis behavior in voltage transfer characteristics (VTC) of NCFET inverters, even though the hysteresis behavior does not appear in the transfer curve of the NCFETs. However, the hysteresis of the NCFET inverter is a key to a new application. Schmitt trigger inverters which filter the noise in circuits consist of 4 to 6 MOSFETs, while the NCFET based Schmitt trigger is composed of two devices, n type and p type. It suggests a possibility of expansion of the applications. | - |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | Negative capacitance FET | - |
dc.subject | Ferroelectrics | - |
dc.subject | Drain-induced barrier lowering | - |
dc.subject | Schmitt trigger inverter | - |
dc.subject | Quantum transport calculation | - |
dc.subject | 네거티브 커패시턴스 전계효과 트랜지스터 | - |
dc.subject | 강유전체 | - |
dc.subject | 드레인 유도 장벽 저하 | - |
dc.subject | 슈미트 트리거 인버터 | - |
dc.subject | 양자 수송 계산 | - |
dc.title | Quantum transport simulation study of negative capacitance FETs based on the Landau theory and its applications | - |
dc.title.alternative | Landau 이론 기반 NCFET 소자의 양자 수송 전산모사를 통한 소자 특성 연구와 응용 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 325007 | - |
dc.description.department | 한국과학기술원 :전기및전자공학부, | - |
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