(A) study on the effect of aluminum on an indium-aluminum oxide semiconductors deposited by PEALD to control the electrical and structural characteristics

Abstract

In this work, we reveal the effect of Al in InAlO (IAO) films, deposited by plasma-enhanced atomic layer deposition (PEALD). The material properties of IAO thin films and IAO TFTs are intensively studied by changing the ratio of Al/In. Since both Al and In are trivalent atoms, the variation in ratio of Al/In can cause huge change of structural and electrical properties of the IAO films. In addition, the optimized IAO TFTs with amorphous phase show excellent TFT performance. Here, two methods were used to fabricate the IAO films by PEALD. One is the common method to deposit the nano-laminated structure. The other is a very unique method that the homogeneous IAO film with either amorphous or polycrystalline phase was deposited for the first time.