Low-Resistive High-Work-Function Gate Electrode for Transparent a-IGZO TFTs

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Highly transparent and low-resistive multilayered gate electrodes, MoO3/indium-tin oxide (ITO)/Ag/ZnS (MIAZ) playing as the high-work-function layer, the nonreactive interface layer, the lateral conduction layer, and the index-matching layer, respectively, have been investigated for the application to the transparent oxide thin-film transistors (TFTs). The transmittance of the optimized MIAZ electrode is 92.46% and the sheet resistance is 7.77 Omega/square. The top gate InGaZnO TFT with this gate electrode shows the mobility of 11.57 cm(2)/(V . s) and positive V-th of 0.210 V compared with that with single ITO gate electrode of which V-th is -0.086 V.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2017-01
Language
English
Article Type
Article
Keywords

LIGHT-EMITTING-DIODES; MULTILAYER ELECTRODE; THIN-FILM; ANODE

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.1, pp.164 - 169

ISSN
0018-9383
DOI
10.1109/TED.2016.2631567
URI
http://hdl.handle.net/10203/220945
Appears in Collection
MS-Journal Papers(저널논문)EE-Journal Papers(저널논문)
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