A quantitative strain analysis of a flexible single-crystalline silicon membrane

Cited 4 time in webofscience Cited 0 time in scopus
  • Hit : 274
  • Download : 0
This study presents a quantitative strain analysis of a single-crystal Si membrane for high performance flexible devices. Advanced thinning and transfer methods were used to make flexible single-crystal Si devices. Two Si membrane strain gauges, each with a different stack, were fabricated on a polydimethylsiloxane/polyimide film using a silicon-on-insulator wafer. One gauge contains a 10-mu m-thick handling Si layer, whereas the handling Si layer was completely removed for the other case. Although the Si membrane with the 10-mu m-thick handling Si layer is flexible, the strain applied to the active Si layer (0.127%) is three times higher than the strain applied to the Si membrane without the handling Si layer (0.037%) at a bending radius of 5mm. This leads to the more reliable electrical and mechanical performance of the device fabricated on the Si membrane without the handling Si layer. The experimental results were verified through a finite element method simulation and analytical modeling. The quantitative strain analyses for flexible devices suggested here can expedite the realization of high performance flexible electronics using a single crystal silicon active layer. Published by AIP Publishing.
Publisher
AMER INST PHYSICS
Issue Date
2017-01
Language
English
Article Type
Article
Citation

APPLIED PHYSICS LETTERS, v.110, no.3

ISSN
0003-6951
DOI
10.1063/1.4974078
URI
http://hdl.handle.net/10203/220901
Appears in Collection
ME-Journal Papers(저널논문)EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 4 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0