DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, S. M. | ko |
dc.contributor.author | Ha, Jaewook | ko |
dc.contributor.author | Kim, H. | ko |
dc.contributor.author | Kim, J. B. | ko |
dc.date.accessioned | 2017-02-09T08:23:05Z | - |
dc.date.available | 2017-02-09T08:23:05Z | - |
dc.date.created | 2017-02-01 | - |
dc.date.created | 2017-02-01 | - |
dc.date.issued | 2016 | - |
dc.identifier.citation | INTEGRATED FERROELECTRICS, v.176, no.1, pp.118 - 125 | - |
dc.identifier.issn | 1058-4587 | - |
dc.identifier.uri | http://hdl.handle.net/10203/220442 | - |
dc.description.abstract | We theoretically investigate the surface charge effects on a p-n junction model system. It is calculated that the polarity of the surface charges around the junction interface induces different variations in the built-in potential, which has been demonstrated to affect the band diagrams of p-n junction systems. That is, the more negative the surface charge is, the more the built-in potential decreases, and vice versa for positive surface charges in the system. These surface charges affect the modulation of three recombination processes, i.e. the Shockley-Read-Hall, band-to-band, and Auger recombination processes, and are numerically investigated with different surface charge densities imposed at the junction interface. As a result, it is calculated that the three recombination rates are reduced with increasing magnitudes of surface charge density due to the free carrier depletion that occurs around the p-n junction regions. | - |
dc.language | English | - |
dc.publisher | TAYLOR & FRANCIS LTD | - |
dc.subject | OPEN-CIRCUIT VOLTAGE | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | SOLAR-CELLS | - |
dc.subject | PIEZO-PHOTOTRONICS | - |
dc.subject | EFFICIENCY | - |
dc.title | Numerical study of surface charge effects on a p-n junction model system: Modulation of junction potential, band diagrams, and recombinations | - |
dc.type | Article | - |
dc.identifier.wosid | 000390891400012 | - |
dc.identifier.scopusid | 2-s2.0-85006152596 | - |
dc.type.rims | ART | - |
dc.citation.volume | 176 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 118 | - |
dc.citation.endingpage | 125 | - |
dc.citation.publicationname | INTEGRATED FERROELECTRICS | - |
dc.identifier.doi | 10.1080/10584587.2016.1249783 | - |
dc.contributor.localauthor | Kim, J. B. | - |
dc.contributor.nonIdAuthor | Kim, S. M. | - |
dc.contributor.nonIdAuthor | Kim, H. | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | p-n junction | - |
dc.subject.keywordAuthor | surface charges | - |
dc.subject.keywordAuthor | junction potential | - |
dc.subject.keywordAuthor | band diagrams | - |
dc.subject.keywordAuthor | recombination | - |
dc.subject.keywordPlus | OPEN-CIRCUIT VOLTAGE | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | PIEZO-PHOTOTRONICS | - |
dc.subject.keywordPlus | EFFICIENCY | - |
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