Three-Dimensional Fin-Structured Semiconducting Carbon Nanotube Network Transistor

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Three-dimensional (3-D) fin-structured carbon nanotube field-effect transistors (CNT-FETs) with purified 99.9% semiconducting CNTs were demonstrated on a large scale 8 in. silicon wafer. The fabricated 3-D CNT-FETs take advantage of the 3-D geometry and exhibit enhanced electrostatic gate controllability and superior charge transport. A trigated structure surrounding the randomly networked single-walled CNT channel was formed on a fin-like 3-D silicon frame, and as a result, the effective packing density increased to almost 600 CNTs/mu m. Additionally, highly sensitive controllability of the threshold voltage (V-TH) was achieved using a thin back gate oxide in the same silicon frame to control power. consumption and enhance performance. Our results are expected to broaden the design margin of CNT-based circuit architectures for versatile applications. The proposed 3-D CNT-FETs can potentially provide a desirable alternative to silicon based nanoelectronics and a blueprint for furthering the practical use of emerging low-dimensional materials other than CNTs.
Publisher
AMER CHEMICAL SOC
Issue Date
2016-12
Language
English
Article Type
Article
Keywords

HIGH-PERFORMANCE ELECTRONICS; FIELD-EFFECT TRANSISTORS; ARRAYS; GATE; INTEGRATION; DEVICES

Citation

ACS NANO, v.10, no.12, pp.10894 - 10900

ISSN
1936-0851
DOI
10.1021/acsnano.6b05429
URI
http://hdl.handle.net/10203/220440
Appears in Collection
EE-Journal Papers(저널논문)
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