DC Field | Value | Language |
---|---|---|
dc.contributor.author | Moon, Hanul | ko |
dc.contributor.author | Kim, Ho Yeon | ko |
dc.contributor.author | Chung, Jin | ko |
dc.contributor.author | Kim, Eunhye | ko |
dc.contributor.author | Lee, jaeho | ko |
dc.contributor.author | Yoo, Seunghyup | ko |
dc.date.accessioned | 2017-01-13T07:04:44Z | - |
dc.date.available | 2017-01-13T07:04:44Z | - |
dc.date.created | 2016-12-28 | - |
dc.date.issued | 2016-03-30 | - |
dc.identifier.citation | MRS Spring Meeting | - |
dc.identifier.uri | http://hdl.handle.net/10203/218911 | - |
dc.description.abstract | Transparent electrode (TE) is a key component in many modern electronic devices. While it has been heavily dominated by indium tin oxides (ITOs), various process- or material-related constraints in next-generation devices such as flexible displays and see-through electronic devices often require an alternative TE technology to be developed. In general, transparent electrodes to be used with these emerging devices should fulfill the following requirements: (i) their sheet resistance should be as low as possible; (ii) TEs themselves should be compatible with pre- or post-processing used during the fabrication of devices of interest; (iii) their deposition should be mild enough not to damage layers underneath; and (iv) for flexible devices, TEs should also possess an excellent flexibility with sufficiently high onset strain for bending-induced crack formation. In fact, one of the major reasons to develop ITO-alternatives is because ITO forms crack at a relatively low strain (typically around 1.5% or less). In addition, TEs should be able to provide optical properties required by a given application. In many cases, high transmittance is generally desired; in case of light-emitting or photovoltaic devices, however, a certain range of reflectance (at the expense of transmittance) may be preferred for a cavity resonance effect for wide color gamut or for efficiency enhancement. Therefore, ability to tune transmittance (reflectance) in a wide range could be highly useful to cope with desired specifications of various applications. In this talk, oxide-metal-oxide (OMO) or dielectric-metal-dielectric (DMD) layers are introduced as a versatile TE that can fulfill all the requirements mentioned above and, moreover, can easily tune its transmittance/ reflectance for the required optical characteristics. Highly flexible organic light-emitting diodes (OLEDs), transparent thin-film transistors, efficient see-through solar cells are introduced as representative examples. Subtle but significant effect of the refractive index of oxide layers is also discussed to reveal its versatile potential. | - |
dc.language | English | - |
dc.publisher | Material Research Society | - |
dc.title | Oxide-Metal-Oxide Layers for Flexible and See-Through Electronics | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.publicationname | MRS Spring Meeting | - |
dc.identifier.conferencecountry | US | - |
dc.identifier.conferencelocation | Phoenix Convention Center, Arizona | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Yoo, Seunghyup | - |
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