Highly Conducting In2O3 Nanowire Network with Passivating ZrO2 Thin Film for Solution-Processed Field Effect Transistors

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A hybrid In2O3 nanowire/ZrO2 thin film field effect transistor is demonstrated and the role of insulating ZrO2 thin film is investigated. The ZrO2 film effectively passivates oxygen vacancies at the surface of the conducting In2O3 nanowire network and produces interfacial dipoles, leading to a lower energy barrier for current conduction.
Publisher
WILEY-BLACKWELL
Issue Date
2016-11
Language
English
Article Type
Article
Keywords

ELECTRON-INJECTION LAYER; ENERGY-LEVEL ALIGNMENT; HIGH-MOBILITY; METAL-OXIDES; PERFORMANCE; TRANSPARENT; DESIGN; FABRICATION; INTERFACES; COMPOSITE

Citation

ADVANCED ELECTRONIC MATERIALS, v.2, no.11

ISSN
2199-160X
DOI
10.1002/aelm.201600218
URI
http://hdl.handle.net/10203/218248
Appears in Collection
MS-Journal Papers(저널논문)
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