A Low Dark Current Planar-type InGaAs Guard-ring PIN Photodiode Using an ALD-Al2O3 Passivation for Short-wave Infrared Imaging Applications

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Publisher
IEEE
Issue Date
2016-06-29
Language
English
Citation

IEEE International Conference on InP and Related Materials

URI
http://hdl.handle.net/10203/215726
Appears in Collection
EE-Conference Papers(학술회의논문)
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