Reliable Memristive Switching Memory Devices Enabled by Densely Packed Silver Nanocone Arrays as Electric -Field Concentrators

Memristor devices based on electrochemical metallization operate through electrochemical formation/dissolution of nanoscale metallic filaments, and they are considered a promising future nonvolatile memory because of their outstanding characteristics over conventional charge-based memories. However, nanoscale conductive paths or filaments precipitated from the redox process of metallic elements are randomly formed inside oxides, resulting in unexpected and stochastic memristive switching parameters including the operating voltage and the resistance state. Here, we present the guided formation of conductive filaments in Ag nanocone/SiO, nanomesh/Pt memristors fabricated by high-resolution nanotransfer printing. Consequently, the uniformity of the memristive switching behavior is significantly improved by the existence of electric-field concentrator arrays consisting of Ag nanocones embedded in SiO2 nanomesh structures. This selective and controlled filament growth was experimentally supported by analyzing simultaneously the surface morphology and current mapping results using conductive atomic force microscopy. Moreover, stable multilevel switching operations with four discrete conduction states were achieved by the nanopatterned memristor device, demonstrating its potential in high density nanoscale memory devices.
Publisher
AMER CHEMICAL SOC
Issue Date
2016-10
Language
ENG
Keywords

CONDUCTING FILAMENT GROWTH; ELECTROLYTE-BASED RERAM; METAL-OXIDE RRAM; RESISTIVE MEMORY; NONVOLATILE MEMORY; THIN-FILMS; BLOCK-COPOLYMER; ATOMIC SWITCH; IMPROVEMENT; TRANSITION

Citation

ACS NANO, v.10, no.10, pp.9478 - 9488

ISSN
1936-0851
DOI
10.1021/acsnano.6b04578
URI
http://hdl.handle.net/10203/214627
Appears in Collection
EE-Journal Papers(저널논문)MS-Journal Papers(저널논문)
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