DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ahn, Dae-Chul | ko |
dc.contributor.author | Lee, Byung-Hyun | ko |
dc.contributor.author | Kang, Min-Ho | ko |
dc.contributor.author | Hur, Jae | ko |
dc.contributor.author | Bang, Tewook | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2016-11-30T08:29:48Z | - |
dc.date.available | 2016-11-30T08:29:48Z | - |
dc.date.created | 2016-11-17 | - |
dc.date.created | 2016-11-17 | - |
dc.date.issued | 2016-10 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.109, no.18 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/214217 | - |
dc.description.abstract | The influence of process-induced defect formation was investigated in a vertically integrated (VI) junctionless-mode field-effect transistor (JL-FET). Compared to the low energy and one-time ion-implantation process to fabricate a single nanowire-based FET, the high-energy and repetitive ion-implantation process for the creation of the VI JL-FET inevitably generates more defects in the crystalline sites. Even after high-temperature rapid thermal annealing, the non-recovered defect sites existing in the interface and silicon channel, as verified by a transmission electron microscopy analysis, lead to the degradation of the electrical performance such as on-and off-state current. Particularly, the abnormal behavior of the off-state current, mostly arising from the gate-induced drain leakage, was analyzed using the experimental results, and supported by the numerical simulation as well. Published by AIP Publishing. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | ULTRA-SHALLOW JUNCTIONS | - |
dc.title | Impact of crystalline damage on a vertically integrated junctionless nanowire transistor | - |
dc.type | Article | - |
dc.identifier.wosid | 000387900600042 | - |
dc.identifier.scopusid | 2-s2.0-84994338132 | - |
dc.type.rims | ART | - |
dc.citation.volume | 109 | - |
dc.citation.issue | 18 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.4965851 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Ahn, Dae-Chul | - |
dc.contributor.nonIdAuthor | Kang, Min-Ho | - |
dc.contributor.nonIdAuthor | Bang, Tewook | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | ULTRA-SHALLOW JUNCTIONS | - |
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