DC Field | Value | Language |
---|---|---|
dc.contributor.author | BEYZAVI, K | ko |
dc.contributor.author | Lee, Kwyro | ko |
dc.contributor.author | KIM, DM | ko |
dc.contributor.author | NATHAN, MI | ko |
dc.contributor.author | WRENNER, K | ko |
dc.contributor.author | WRIGHT, SL | ko |
dc.date.accessioned | 2011-01-04T02:43:55Z | - |
dc.date.available | 2011-01-04T02:43:55Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1991-03 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.58, no.12, pp.1268 - 1270 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/21343 | - |
dc.description.abstract | The electron mobility in p-type GaAs, mu-e(p), has been determined as a function of temperature by measuring the common-emitter cutoff frequency, f(T), of an AlGaAs/GaAs n-p-n heterojunction bipolar transistor. The base was 0.6-mu-m thick and it was doped with 4 X 10(18) cm-3 Be. The 300 K value of 1055 cm2/V s and 79 K value of 5000 cm2/V s for mu-e(p) are comparable to the previously measured values. The discrepancy with the calculated values is pointed out. The recombination lifetime is also measured as a function of temperature for minority carriers. The results agree reasonably well with the calculated radiative recombination time. | - |
dc.description.sponsorship | We wish to acknowledge Keith Jenkins, Ali Ghiasi Richard Kiehl, David Frank, and Paul Solomon for technical discussions. We also acknowledge support from the IBM SUR contract at the University of Minnesota. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | ELECTRON-MOBILITY | - |
dc.title | TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER MOBILITY AND RECOMBINATION TIME IN P-TYPE GAAS | - |
dc.type | Article | - |
dc.identifier.wosid | A1991FD36800015 | - |
dc.identifier.scopusid | 2-s2.0-0041472879 | - |
dc.type.rims | ART | - |
dc.citation.volume | 58 | - |
dc.citation.issue | 12 | - |
dc.citation.beginningpage | 1268 | - |
dc.citation.endingpage | 1270 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.104332 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, Kwyro | - |
dc.contributor.nonIdAuthor | BEYZAVI, K | - |
dc.contributor.nonIdAuthor | KIM, DM | - |
dc.contributor.nonIdAuthor | NATHAN, MI | - |
dc.contributor.nonIdAuthor | WRENNER, K | - |
dc.contributor.nonIdAuthor | WRIGHT, SL | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | ELECTRON-MOBILITY | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.