A HIGH-EFFICIENCY 60-GHz INDIRECT LOCAL OSCILLATOR IN 90-nm CMOS

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This letter presents a highly efficient 60-GHz local oscillator ( LO) in a 90-nm CMOS. The proposed LO consists a 30-GHz LC VCO and a frequency doubler. With this topology, the LO generator has a high output power of -0.1 dBm at 58.2 GHz, consuming only 10.4 mW from a 0.8 V supply, resulting in a record efficiency of 9.4% among ;60-GHz CMOS LOs. At 58.2 GHz, the phase noise is -115 dBc/Hz at a 10-MHz offset. The measured frequency tuning range is from 57.56 to 64.47 GHz. (C) 2016 Wiley Periodicals, Inc
Publisher
WILEY-BLACKWELL
Issue Date
2016-09
Language
English
Article Type
Article
Citation

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.58, no.9, pp.2091 - 2093

ISSN
0895-2477
DOI
10.1002/mop.29981
URI
http://hdl.handle.net/10203/213069
Appears in Collection
EE-Journal Papers(저널논문)
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