Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal-Interlayer-n-Germanium Source/Drain Structure

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The effect of post-deposition H-2 annealing (PDHA) on the reduction of a contact resistance by the metal-interlayer-semiconductor (M-I-S) source/drain (S/D) structure of the germanium (Ge) n-channel field-effect transistor (FET) is demonstrated in this letter. The M-I-S structure reduces the contact resistance of the metal/n-type Ge (n-Ge) contact by alleviating the Fermi-level pinning (FLP). In addition, the PDHA induces interlayer doping and interface controlling effects that result in a reduction of the tunneling resistance and the series resistance regarding the interlayer and an alleviation of the FLP, respectively. A specific contact resistivity (rho(c)) of 3.4x10(-4) Omega . cm(2) was achieved on a moderately doped n-Ge substrate (1x10(17) cm(-3)), whereby 5900x reduction was exhibited from the Ti/n-Ge structure, and a 10x reduction was achieved from the Ti/Ar plasma-treated TiO2-x/n-Ge structure. The PDHA technique is, therefore, presented as a promising S/D contact technique for the development of the Ge n-channel FET, as it can further lower the contact resistance of the M-I-S structure.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2016-06
Language
English
Article Type
Article
Keywords

INTERFACIAL LAYER; PLASMA; RESISTIVITY; ARRAYS; GE

Citation

IEEE ELECTRON DEVICE LETTERS, v.37, no.6, pp.709 - 712

ISSN
0741-3106
DOI
10.1109/LED.2016.2558582
URI
http://hdl.handle.net/10203/212573
Appears in Collection
EE-Journal Papers(저널논문)
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