DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ahn, Juhan | ko |
dc.contributor.author | Kim, Jeong-Kyu | ko |
dc.contributor.author | Kim, Sun-Woo | ko |
dc.contributor.author | Kim, Gwang-Sik | ko |
dc.contributor.author | Shin, Changhwan | ko |
dc.contributor.author | Kim, Jong-Kook | ko |
dc.contributor.author | Cho, Byung-Jin | ko |
dc.contributor.author | Yu, Hyun-Yong | ko |
dc.date.accessioned | 2016-09-07T01:44:07Z | - |
dc.date.available | 2016-09-07T01:44:07Z | - |
dc.date.created | 2016-06-13 | - |
dc.date.created | 2016-06-13 | - |
dc.date.issued | 2016-06 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.37, no.6, pp.705 - 708 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/212572 | - |
dc.description.abstract | A metal nitride-interlayer-semiconductor source/drain (MN-I-S S/D) model is newly proposed to investigate the effect of tantalum nitride (TaN) on the specific contact resistivity (rho(c)) of an MN-I-S S/D with an undoped interlayer (undoped-IL) or a heavily doped IL (n(+)-IL) in sub-10-nm n-type Ge FinFETs. In this model, the workfunction variation of TaN was considered following the Rayleigh distribution. Compared with MN-I-S structures with an undoped-IL, structures with an n(+)-IL generate much lower rho(c) values (i.e., similar to 2 x 10(-9) Omega . cm(2)) and are less prone to variation. In addition, the impact of rho(c) variation on device performance is investigated using 3-D technology computer aided design simulation for undoped or heavily doped ILs in MN-I-S S/D structures. MN-I-S S/Ds with an n(+)-IL can achieve much lower current variation and a higher ON-state drive current. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | WORK-FUNCTION VARIATION | - |
dc.subject | INTERFACIAL LAYER | - |
dc.subject | GERMANIDE | - |
dc.title | Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET | - |
dc.type | Article | - |
dc.identifier.wosid | 000379934100004 | - |
dc.identifier.scopusid | 2-s2.0-84971492637 | - |
dc.type.rims | ART | - |
dc.citation.volume | 37 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 705 | - |
dc.citation.endingpage | 708 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2016.2553132 | - |
dc.contributor.localauthor | Cho, Byung-Jin | - |
dc.contributor.nonIdAuthor | Ahn, Juhan | - |
dc.contributor.nonIdAuthor | Kim, Jeong-Kyu | - |
dc.contributor.nonIdAuthor | Kim, Sun-Woo | - |
dc.contributor.nonIdAuthor | Kim, Gwang-Sik | - |
dc.contributor.nonIdAuthor | Shin, Changhwan | - |
dc.contributor.nonIdAuthor | Kim, Jong-Kook | - |
dc.contributor.nonIdAuthor | Yu, Hyun-Yong | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | CMOS | - |
dc.subject.keywordAuthor | FinFET | - |
dc.subject.keywordAuthor | germanium | - |
dc.subject.keywordAuthor | interlayer | - |
dc.subject.keywordAuthor | specific contact resistivity | - |
dc.subject.keywordAuthor | tantalum nitride | - |
dc.subject.keywordAuthor | variation | - |
dc.subject.keywordAuthor | workfunction | - |
dc.subject.keywordAuthor | zinc oxide | - |
dc.subject.keywordPlus | WORK-FUNCTION VARIATION | - |
dc.subject.keywordPlus | INTERFACIAL LAYER | - |
dc.subject.keywordPlus | GERMANIDE | - |
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