DSpace at KOASAS
College of Engineering(공과대학)Graduate school of EEWS(EEWS대학원)EEW-Journal Papers(저널논문)

Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism

Cited 94 time in webofscience Cited 0 time in scopus
  • Hit : 759
  • Download : 0
Export
DC FieldValueLanguage
dc.contributor.authorShim, Jaewooko
dc.contributor.authorKim, Hyo Seokko
dc.contributor.authorShim, Yoon Suko
dc.contributor.authorKang, Dong-Hoko
dc.contributor.authorPark, Hyung-Youlko
dc.contributor.authorLee, Jaehyeongko
dc.contributor.authorJeon, Jaehoko
dc.contributor.authorJung, Seong Junko
dc.contributor.authorSong, Young Jaeko
dc.contributor.authorJung, Woo-Shikko
dc.contributor.authorLee, Jaehoko
dc.contributor.authorPark, Seongjunko
dc.contributor.authorKim, Jeehwanko
dc.contributor.authorLee, Sungjooko
dc.contributor.authorKim, Yong-Hoonko
dc.contributor.authorPark, Jin-Hongko
dc.date.accessioned2016-09-07T01:04:43Z-
dc.date.available2016-09-07T01:04:43Z-
dc.date.created2016-08-08-
dc.date.created2016-08-08-
dc.date.created2016-08-08-
dc.date.created2016-08-08-
dc.date.issued2016-07-
dc.identifier.citationADVANCED MATERIALS, v.28, no.26, pp.5293 - +-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10203/212462-
dc.description.abstractA WSe2-based vertical graphene-transition metal dichalcogenide heterojunction barristor shows an unprecedented on-current increase with decreasing temperature and an extremely high on/off-current ratio of 5 x 10(7) at 180 K (3 x 10(4) at room temperature). These features originate from a trap-assisted tunneling process involving WSe2 defect states aligned near the graphene Dirac point-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.titleExtremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism-
dc.typeArticle-
dc.identifier.wosid000379938800020-
dc.identifier.scopusid2-s2.0-84966359422-
dc.type.rimsART-
dc.citation.volume28-
dc.citation.issue26-
dc.citation.beginningpage5293-
dc.citation.endingpage+-
dc.citation.publicationnameADVANCED MATERIALS-
dc.identifier.doi10.1002/adma.201506004-
dc.contributor.localauthorKim, Yong-Hoon-
dc.contributor.nonIdAuthorShim, Jaewoo-
dc.contributor.nonIdAuthorKang, Dong-Ho-
dc.contributor.nonIdAuthorPark, Hyung-Youl-
dc.contributor.nonIdAuthorLee, Jaehyeong-
dc.contributor.nonIdAuthorJeon, Jaeho-
dc.contributor.nonIdAuthorJung, Seong Jun-
dc.contributor.nonIdAuthorSong, Young Jae-
dc.contributor.nonIdAuthorJung, Woo-Shik-
dc.contributor.nonIdAuthorLee, Jaeho-
dc.contributor.nonIdAuthorPark, Seongjun-
dc.contributor.nonIdAuthorKim, Jeehwan-
dc.contributor.nonIdAuthorLee, Sungjoo-
dc.contributor.nonIdAuthorPark, Jin-Hong-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusSINGLE-LAYER MOS2-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTOR-
dc.subject.keywordPlusBILAYER GRAPHENE-
dc.subject.keywordPlusELECTRONIC-STRUCTURE-
dc.subject.keywordPlusINTEGRATED-CIRCUITS-
dc.subject.keywordPlusMEMORY DEVICES-
dc.subject.keywordPlusHIGH-MOBILITY-
dc.subject.keywordPlusON/OFF-RATIO-
dc.subject.keywordPlusHETEROSTRUCTURES-
dc.subject.keywordPlusCONTACTS-
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 94 items in WoS Click to see citing articles in records_button

Display Simple Item Record

qr_code

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.


rss_1.0 rss_2.0 atom_1.0