Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism

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A WSe2-based vertical graphene-transition metal dichalcogenide heterojunction barristor shows an unprecedented on-current increase with decreasing temperature and an extremely high on/off-current ratio of 5 x 10(7) at 180 K (3 x 10(4) at room temperature). These features originate from a trap-assisted tunneling process involving WSe2 defect states aligned near the graphene Dirac point
Publisher
WILEY-V C H VERLAG GMBH
Issue Date
2016-07
Language
English
Article Type
Article
Keywords

SINGLE-LAYER MOS2; FIELD-EFFECT TRANSISTOR; BILAYER GRAPHENE; ELECTRONIC-STRUCTURE; INTEGRATED-CIRCUITS; MEMORY DEVICES; HIGH-MOBILITY; ON/OFF-RATIO; HETEROSTRUCTURES; CONTACTS

Citation

ADVANCED MATERIALS, v.28, no.26, pp.5293 - +

ISSN
0935-9648
DOI
10.1002/adma.201506004
URI
http://hdl.handle.net/10203/212462
Appears in Collection
EEW-Journal Papers(저널논문)
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