Q-DRAM: Quick-Access DRAM with Decoupled Restoring from Row-Activation

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The relatively high latency of DRAM is mostly caused by the long row-activation time which in fact consists of sensing and restoring time. Memory controllers cannot distinguish between them since they are performed consecutively by a single row-activation command. If these two steps are separated, the restoring can be delayed until DRAM access is uncongested. Hence, we propose Quick-Access DRAM (Q-DRAM) which discriminates between sensing and restoring. Our approach is to allow destructive access (i.e., only sensing is performed without restoring by a row-activation command) using per-bank multiple row-buffers. We call the destructive access and per-bank multiple row-buffers quick-access and quick-buffers (q-buffers) respectively. In addition, we propose Quick-access Trigger (Q-TRIGGER) and RESTORER to utilize Q-DRAM. Q-TRIGGER makes a decision whether quick-access is required or not, and RESTORER decides when to restore the data at the destructed cell. Specifically, RESTORER detects the proper timing to hide restoring time by predicting data bus occupation and by exploiting bank-level locality. Evaluations show that Q-DRAM significantly improved performance for both single-and multi-core systems.
Publisher
IEEE COMPUTER SOC
Issue Date
2016-07
Language
English
Article Type
Article
Keywords

MEMORY; FAIRNESS; SYSTEMS

Citation

IEEE TRANSACTIONS ON COMPUTERS, v.65, no.7, pp.2213 - 2227

ISSN
0018-9340
DOI
10.1109/TC.2015.2479587
URI
http://hdl.handle.net/10203/212115
Appears in Collection
EE-Journal Papers(저널논문)
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