DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ahn, Hyun Jun | ko |
dc.contributor.author | Moon, Jungmin | ko |
dc.contributor.author | Koh, Sungho | ko |
dc.contributor.author | Seo, Yujin | ko |
dc.contributor.author | Kim, Choong-Ki | ko |
dc.contributor.author | Rho, Il Cheol | ko |
dc.contributor.author | Kim, Choon Hwan | ko |
dc.contributor.author | Hwang, Wan Sik | ko |
dc.contributor.author | Cho, Byung-Jin | ko |
dc.date.accessioned | 2016-07-25T09:36:02Z | - |
dc.date.available | 2016-07-25T09:36:02Z | - |
dc.date.created | 2016-06-13 | - |
dc.date.created | 2016-06-13 | - |
dc.date.created | 2016-06-13 | - |
dc.date.issued | 2016-07 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.7, pp.2858 - 2863 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/212108 | - |
dc.description.abstract | Erbium carbide (ErC2) prepared by atomic layer deposition (ALD) is successfully demonstrated for the first time as a novel work function (WF) metal for nMOSFET applications. The prepared ErC2 shows a very low effective WF (eWF), as low as 3.9 eV on HfO2, yet with excellent thermal stability. In addition, it did not show significant Fermi-level pinning on high-k dielectrics even after high-temperature annealing. The low eWF property of ErC2 originates from the properties of the lanthanide family, while its good thermal stability is attributed to the properties of metal carbides. ALD-ErC2 has superior conformality over other deposition methods, and thus is a strong candidate for 3-D structure devices. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Very Low-Work-Function ALD-Erbium Carbide (ErC2) Metal Electrode on High-K Dielectrics | - |
dc.type | Article | - |
dc.identifier.wosid | 000378607100034 | - |
dc.identifier.scopusid | 2-s2.0-84971455200 | - |
dc.type.rims | ART | - |
dc.citation.volume | 63 | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | 2858 | - |
dc.citation.endingpage | 2863 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2016.2570221 | - |
dc.contributor.localauthor | Cho, Byung-Jin | - |
dc.contributor.nonIdAuthor | Koh, Sungho | - |
dc.contributor.nonIdAuthor | Rho, Il Cheol | - |
dc.contributor.nonIdAuthor | Kim, Choon Hwan | - |
dc.contributor.nonIdAuthor | Hwang, Wan Sik | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Atomic-layer-deposition (ALD) | - |
dc.subject.keywordAuthor | Fermi-level pinning | - |
dc.subject.keywordAuthor | high-k metal gate (HKMG) | - |
dc.subject.keywordAuthor | metal gate electrode | - |
dc.subject.keywordAuthor | rare earth metal | - |
dc.subject.keywordAuthor | replacement gate process | - |
dc.subject.keywordAuthor | work function (WF) | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | VOLTAGE ROLL-OFF | - |
dc.subject.keywordPlus | HIGH-KAPPA | - |
dc.subject.keywordPlus | GATE STACKS | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | BEHAVIOR | - |
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