Very Low-Work-Function ALD-Erbium Carbide (ErC2) Metal Electrode on High-K Dielectrics

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Erbium carbide (ErC2) prepared by atomic layer deposition (ALD) is successfully demonstrated for the first time as a novel work function (WF) metal for nMOSFET applications. The prepared ErC2 shows a very low effective WF (eWF), as low as 3.9 eV on HfO2, yet with excellent thermal stability. In addition, it did not show significant Fermi-level pinning on high-k dielectrics even after high-temperature annealing. The low eWF property of ErC2 originates from the properties of the lanthanide family, while its good thermal stability is attributed to the properties of metal carbides. ALD-ErC2 has superior conformality over other deposition methods, and thus is a strong candidate for 3-D structure devices.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2016-07
Language
English
Article Type
Article
Keywords

ATOMIC LAYER DEPOSITION; VOLTAGE ROLL-OFF; HIGH-KAPPA; GATE STACKS; TECHNOLOGY; BEHAVIOR

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.7, pp.2858 - 2863

ISSN
0018-9383
DOI
10.1109/TED.2016.2570221
URI
http://hdl.handle.net/10203/212108
Appears in Collection
EE-Journal Papers(저널논문)
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