Solution-processed conformal coating of ferroelectric polymer film and its application to multi-bit memory device

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Ferroelectric multi-bit storage memory which is fabricated by means of the patterning and double-coating of ferroelectric polymer film is demonstrated. The multi-bit memory device demonstrated here has two thicknesses in a capacitor. Therefore, ferroelectric switching at each thickness arises in different voltage range. The structured capacitor with two different thicknesses is realized by optimizing two processes, i.e., the photo-lithographical patterning of the ferroelectric film and a double-coating method for the formation of the multilayer structure. Not only photo-lithographical patterning but also the double-coating method of ferroelectric film was performed with a solubility-controlled ferroelectric polymer solution created by the addition of an insoluble solvent. From electrostatic force microscopy and displacement-voltage measurements, the fabricated multi-bit storage memory operated as predicted for a multi-bit memory scheme. The solubility-controlling method suggested here will offer additional promising routes to fabricate complex organic devices based on a solution process. (C) 2016 Elsevier B.V. All rights reserved
Publisher
ELSEVIER SCIENCE BV
Issue Date
2016-07
Language
English
Article Type
Article
Keywords

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Citation

MICROELECTRONIC ENGINEERING, v.160, pp.68 - 72

ISSN
0167-9317
DOI
10.1016/j.mee.2016.03.037
URI
http://hdl.handle.net/10203/212099
Appears in Collection
EE-Journal Papers(저널논문)
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