Three-transistor one-time programmable (OTP) ROM cell array using standard CMOS gate oxide antifuse

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A three-transistor (3-T) cell CMOS one-time programmable (OTP) ROM array using CMOS antifuse (AF) based on permanent breakdown of MOSFET gate oxide is proposed, fabricated and characterized. The proposed 3-T OTP cell for ROM array is composed of an nMOS AF, a high-voltage blocking nMOS, and cell access transistor, all compatible with standard CMOS technology. The experimental results show that the proposed structure can be a viable technology option of high-density CMOS OTP ROM array for modern digital as well as analog circuits.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2003-09
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.24, pp.589 - 591

ISSN
0741-3106
DOI
10.1109/LED.2003.815429
URI
http://hdl.handle.net/10203/21008
Appears in Collection
EE-Journal Papers(저널논문)
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