A self-destructible fin flip-flop actuated channel transistor is presented as a candidate for transient electronics. The device uses a movable fin anchored on the source and drain pads with two independent gates on each side of the fin. The fin is in contact with a primary gate during normal operation providing the performance of a single-gate thin-body transistor. When death of the device is desired, a trigger voltage applied to a trigger gate mechanically shatters the source/drain extension region of the fin due to electrostatic bending stress. The self-destruction operation results in the formation of an open circuit at the individual transistor level, terminating the designed function of the chip. The present device can be used in security, military, and consumer applications to protect from malicious attempts to operate the system or gain access to sensitive information.