Ultra-Fast Erase Method of SONOS Flash Memory by Instantaneous Thermal Excitation

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An ultra-fast erasing process that acts within 200 ns is demonstrated in a junctionless gate-all-around nanowire silicon-oxide-nitride-oxide-silicon device. Rapid erasing is enabled with the use of instantaneous thermal excitation (TE) through a double-ended gate structure. Charges inside the silicon nitride layer are de-trapped by Joule heating. Moreover, an in-situ self-annealing effect accompanied by the TE erase method is achieved; hence, both the tunnel oxide quality and the retention characteristics are less degraded compared with the conventional Fowler-Nordheim erase method.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2016-02
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.37, no.2, pp.190 - 192

ISSN
0741-3106
DOI
10.1109/LED.2015.2512280
URI
http://hdl.handle.net/10203/208793
Appears in Collection
EE-Journal Papers(저널논문)
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