Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection

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Device degradation induced by hot-carrier injection was repaired by electrical annealing using Joule heat through a built-in heater in a gate. The concentrated high temperature anneals the gate oxide locally and the degraded device parameters are recovered or further enhanced within a short time of 1 ms. Selecting a proper range of repair voltage is very important to maximize the annealing effects and minimize the extra damages caused by excessive high temperature. The repairing voltage is related to the resistance of the poly-Si gate according to the device scaling
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2016-03
Language
English
Article Type
Article
Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.3, pp.910 - 915

ISSN
0018-9383
DOI
10.1109/TED.2015.2513744
URI
http://hdl.handle.net/10203/208780
Appears in Collection
EE-Journal Papers(저널논문)
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