Nanogap Embedded Transistor for Investigation of Charge Properties in DNA

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A new structure to investigate the charge trapping characteristics of a DNA is proposed. The structure of the proposed device is a field effect transistor (FET) with a nanogap in the dielectric layer. With the proposed device, the charge trapping characteristics of the DNA are confirmed without any adhesion problems and electrical contact instability. The extraction of both electron and hole trapping characteristics were analyzed with an n-channel and a p-channel FET, respectively. The results showed that guanine has plenty of hole trap sites with a shallow energy level, which explains why hole hopping dominantly occurs in the guanine base
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2016-03
Language
English
Article Type
Article
Keywords

HUMAN-GENOME-PROJECT; TRANSPORT; ELECTRONICS; MOLECULES

Citation

IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.15, no.2, pp.188 - 192

ISSN
1536-125X
DOI
10.1109/TNANO.2015.2512300
URI
http://hdl.handle.net/10203/208656
Appears in Collection
EE-Journal Papers(저널논문)
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