Deposition of TiNx film was conducted with a DC sputtering technique. The effect of the processing parameters such as substrate
temperature, deposition time, working pressure, bias power, and volumetric flowing rate ratio of Ar to N2 gas on the resistivity
of TiNx film was systematically investigated. Three kinds of substrates, soda-lime glass, (100) Si wafer, and 1 μm thermally
grown (111) SiO2 wafer were used to explore the effect of substrate. The phase of TiNx film was analyzed by XRD peak pattern
and deposition rate was determined by measuring the thickness of TiNx film through SEM cross-sectional view. Resistance was obtained by 4 point probe method as a function of processing parameters