Effect of sputtering pressure on microstructure and bolometric properties of Nb: TiO2-x films for infrared image sensor applications

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This study aims to investigate the influence of the sputtering pressure (PS) on Nb:TiO2-x films to enhance the bolometric properties. A decrease in the growth rate with the sputtering pressure was perceived in amorphous Nb:TiO2-x films. The incorporation of oxygen with PS was confirmed in an X-ray photo electron spectroscopy analysis. The electrical resistivity was increased with an increase in PS due to a decrease in the number of oxygen vacancies. The linear I-V characteristics confirmed the ohmic contact behavior between the Nb:TiO2-x layer and the electrode material. The present investigation finds that the sample with lower resistivity has good bolometric properties with low noise and high universal bolometric parameters. Finally, the Nb:TiO2-x sample deposited at a sputtering pressure of 2 mTorr shows better bolometric properties than other materials for infrared image sensor applications.
Publisher
AMER INST PHYSICS
Issue Date
2016-01
Language
English
Article Type
Article
Keywords

THIN-FILMS; DOPED TIO2; DEPOSITION

Citation

JOURNAL OF APPLIED PHYSICS, v.119, no.4

ISSN
0021-8979
DOI
10.1063/1.4940957
URI
http://hdl.handle.net/10203/208012
Appears in Collection
EE-Journal Papers(저널논문)
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