Metal nanoparticle embedded floating gate memory based on MoS2 with polymer tunneling dielectric layer.

Among layered two-dimensional (2D) materials, recently, molybdenum disulfide (MoS2) have been researched in electronics, optoelectronics, and flexible devices due to its promising properties such as direct band gap, atomically thin structure, and a high mobility with a high on/off ratio. In particular, the development of nonvolatile memory is necessary for foundation of a electronics platform based on 2D materials due to its fundamental roles in all modern electronic systems. Although several research groups have reported the nonvolatile memory based on MoS2, the unstable tunneling oxide still remain to be addressed due to the challenging task for deposition of an uniform and thin tunneling oxide via atomic layer deposition (ALD) process by lack of dangling bonds on the surface of MoS2. To realize a reliable nonvolatile memory, we investigated the metal nanoparticle embedded floating gate memory based on MoS2 with polymer thin films as tunneling oxide deposited via the initiated chemical vapor deposition (iCVD) process, which enables solvent, damage-free deposition of polymeric layers at low temperature by gas-phase polymerization for highly uniform, sub-10nm-thick ultrathin polymers on various substrates. The fabricated device showed high on/off ratio and considerable memory characteristics with a large tunable memory window. The application of iCVD polymer as tunneling dielectric in this report provides the development of a reliable multi-bit floating gate memory based on MoS2 memory device.
Publisher
한국반도체연구조합
Issue Date
2016-02-22
Language
Korean
Citation

제23회 한국반도체학술대회

URI
http://hdl.handle.net/10203/207276
Appears in Collection
EE-Conference Papers(학술회의논문)
Files in This Item
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