Space charge-induced unusually-high mobility of a solution-processed indium oxide thin film transistor with an ethylene glycol incorporated aluminum oxide gate dielectric

Abstract

The incorporation of ethylene glycol (EG) into a high-kappa aluminium oxide gate dielectric layer was achieved by a solution process, leading to a distinct increase in the mobility of indium oxide TFT. Frequency-dependent capacitance originating from residual EG was examined and the accompanying effects on indium oxide TFT were studied.