Enhancing the Directed Self-assembly Kinetics of Block Copolymers Using Binary Solvent Mixtures

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The rapid pattern formation of well-ordered block copolymer (BCP) nanostructures is practical for next-generation nanolithography applications. However, there remain critical hurdles to achieve the rapid self-assembly of BCPs with a high Flory-Huggins interaction parameter (chi), owing to their slow kinetics. In this article, we report that a binary solvent vapor annealing methodology can significantly accelerate the self-assembly kinetics of poly(dimethylsiloxane-b-styrene) (PDMS-b-PS) BCPs with a high-chi. In particular, we systemically analyzed the effects of the mixing ratio of a binary solvent composed of a PDMS-selective solvent (heptane) and a PS-selective solvent (toluene), showing an ultrafast self-assembly time (<= 1 min) to obtain a well-ordered nanostructure. Moreover, we successfully accomplished extremely fast generation of sub-20 nm dot patterns within an annealing time of 10 s in a 300 nm-wide trench by means of binary solvent annealing. We believe that these results are also applicable to other solvent-based annealing systems of BCPs and that they will contribute to the realization of next-generation ultrafine lithography applications.
Publisher
AMER CHEMICAL SOC
Issue Date
2015-11
Language
English
Article Type
Article
Keywords

MOLECULAR-WEIGHT; LINE PATTERNS; THIN-FILMS; LITHOGRAPHY; NANOLITHOGRAPHY; GRAPHOEPITAXY; ORIENTATION; TEMPERATURE; RESOLUTION; ARRAYS

Citation

ACS APPLIED MATERIALS INTERFACES, v.7, no.46, pp.25843 - 25850

ISSN
1944-8244
DOI
10.1021/acsami.5b08162
URI
http://hdl.handle.net/10203/205170
Appears in Collection
MS-Journal Papers(저널논문)
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