Bendable GaN high electron mobility transistors on plastic substrates

A procedure for fabricating flexible forms of high electron mobility transistors (HEMTs) supported on plastic substrates is described. The process uses a combination of conventional top-down, wafer scale fabrication protocols to define a printable form of ultrathin, device quality multilayer AlGaN/GaN single crystalline microstructures-a so-called microstructured semiconductor ink-and soft-lithographic printing methods to effect their registered transfer to a plastic substrate. These procedures yield high performance, bendable HEMT arrays that are mechanically durable-ones with effective transconductances exceeding nearly all reported forms of printed thin-film transistors. (c) 2006 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2006-12
Language
ENG
Keywords

THIN-FILM TRANSISTORS; SILICON; FORM

Citation

JOURNAL OF APPLIED PHYSICS, v.100, no.12

ISSN
0021-8979
DOI
10.1063/1.2349837
URI
http://hdl.handle.net/10203/20419
Appears in Collection
MS-Journal Papers(저널논문)
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