Interface engineering for high performance graphene electronic devices

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A decade after the discovery of graphene flakes, exfoliated from graphite, we have now secured large scale and high quality graphene film growth technology via a chemical vapor deposition (CVD) method. With the establishment of mass production of graphene using CVD, practical applications of graphene to electronic devices have gained an enormous amount of attention. However, several issues arise from the interfaces of graphene systems, such as damage/unintentional doping of graphene by the transfer process, the substrate effects on graphene, and poor dielectric formation on graphene due to its inert features, which result in degradation of both electrical performance and reliability in actual devices. The present paper provides a comprehensive review of the recent approaches to resolve these issues by interface engineering of graphene for high performance electronic devices. We deal with each interface that is encountered during the fabrication steps of graphene devices, from the graphene/metal growth substrate to graphene/high-k dielectrics, including the intermediate graphene/target substrate.
Publisher
SPRINGEROPEN
Issue Date
2015-06
Language
English
Article Type
Review
Citation

NANO CONVERGENCE, v.2, no.11, pp.1 - 17

ISSN
2196-5404
DOI
10.1186/s40580-015-0042-x
URI
http://hdl.handle.net/10203/203748
Appears in Collection
EE-Journal Papers(저널논문)
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