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Results 51-60 of 60 (Search time: 0.011 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
51
Characterization of oxide Charging in a Magnetically Enhanced Rie Polysilicon Etcher

Hyung-Cheol Shin, Proc. 11th International Syposium on Plasma Chemistry, pp.1534 - 1539, 1993

52
Gate Oxide Damage by Plasma Oxide Deposition and Via RIE

Hyung-Cheol Shin, American Vacuum Society Plasma Etch 1992 Symposium, 1992

53
Impact of Plasma Charging Damage and Diode Protection on Scaled Thin Oxide

Hyung-Cheol Shin, IEDM Technical Digest, pp.467 - 470, 1993

54
Plasma-Etching induced Damage to Thin Oxide

Hyung-Cheol Shin, IEEE/SEMI Advanced Semiconductor Manufacturing Conference, pp.79 - 83, 1992

55
A Model of Thin Oxide Damage by Plasma Etching and Ashing Processes

Hyung-Cheol Shin, Plasma Etch, pp.27 - 29, 1991

56
RF characteristics of 30 nm MOSFETs with non-overlapped source-drain to gate

Hyung-Cheol Shin, Silicon Nanoelectronics Workshop 2002, 2002

57
On the large-signal CMOS modeling and parameter extraction for RF applications

Hyung-Cheol Shin, SISPAD 2002, pp.67 - 70, SISPAD, 2002-09

58
The P-Channel Si Nano-Crystal Memory

Hyung-Cheol Shin, ICSICT 2001, pp.200 - 204, ICSICT, 2001-10

59
A new quantum dot formation process using wet etching of poly-Si along grain boundaries

Hyung-Cheol Shin, MNC2000, pp.248 - 249, MNC, 2000-07

60
Effects of S/D non-overlap and high-κ dielectrics on nano CMOS design

Hyung-Cheol Shin, ISDRS, pp.661 - 664, ISDRS, 2001-12

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