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Results 21-30 of 60 (Search time: 0.004 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
21
Thickness and Other Defects on Oxide and Interface Reliability due to Plasma Processing

Hyung-Cheol Shin, Proc. IEEE International Reliability Phys. Symp., pp.272 - 279, 1993

22
A self-assembled silicon quantum dot transistor operation at room temperature

Hyung-Cheol Shin, 1998 ASIAN SCIENCE SEMINAR, 1998

23
Two Band Tunneling Currents in Dual-Gate CMOSFET with Ultrathin Gate Oxide

Hyung-Cheol Shin, ICSMM 2000, pp.108 - 109, 2000

24
TFSOI Complementary BiCMOS Technology for Low Power RF Mixed-Mode Applications

Hyung-Cheol Shin, IEEE Custom Integrated Circuits Conference, pp.35 - 38, 1996

25
Materials, Device and Gate Oxide Integrith Evaluation of Simox and Bonded SOI Wafers

Hyung-Cheol Shin, Proc. IEEE International SOI Conference, pp.143 - 145, 1995

26
Integrity of Gate Oxide on TFSOI Materials

Hyung-Cheol Shin, Proc. IEEE International SOI Conference, pp.22 - 23, 1995

27
Physical RF modeling of Junction Varactors

Hyung-Cheol Shin, SSDM 2002, pp.418 - 419, 2002

28
50 nm MOSFET with Floating Polysilicon Spacer

Hyung-Cheol Shin, IEEE Silicon Nanoelectronics Workshop, pp.54 - 55, 2001

29
PMOS-based Si Nano-crystal Memory

Hyung-Cheol Shin, Silicon nanoelectronics workshop, pp.10 - 11, 1999

30
A New Curvature-Compensated CMOS Bandgap Reference with Low Power Consumption

Hyung-Cheol Shin, ITC-CSCC 2000, pp.612 - 614, 2000

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