1.1 mW single-mode output power of all-monolithic 1.3 mu m InAlGaAs/InP vertical cavity surface emitting lasers grown by metal organic chemical vapor deposition

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We present all-monolithic InAlGaAs/InP vertical cavity surface emitting lasers (VCSELs) emitting wavelength of 1.3 mu m grown by metal organic chemical vapor deposition (MOCVD). The devices with tunnel junction (TJ) and the air-gap aperture showed the performances as high as output power of 1.1 mW and as low as threshold current of 1.9 mA operating in singlemode at room temperature. We obtained the emitting transverse wavelength of 1333.1 nm with side mode suppression ratio (SMSR) of 40dB, the continuous wave (CW) operation of temperature over 80 degrees C, and modulation bandwidth exceeding 2.5Gbit/s.
Publisher
JAPAN SOC APPLIED PHYSICS
Issue Date
2005
Language
English
Article Type
Article
Keywords

VCSELS

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS, v.44, no.1-7, pp.101 - 103

ISSN
0021-4922
DOI
10.1143/JJAP.44.L101
URI
http://hdl.handle.net/10203/201830
Appears in Collection
MS-Journal Papers(저널논문)
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