DC Field | Value | Language |
---|---|---|
dc.contributor.author | Fortunato, Elvira | ko |
dc.contributor.author | Barros, Raquel | ko |
dc.contributor.author | Barquinha, Pedro | ko |
dc.contributor.author | Figueiredo, Vitor | ko |
dc.contributor.author | Park, Sang-Hee Ko | ko |
dc.contributor.author | Hwang, Chi-Sun | ko |
dc.contributor.author | Martins, Rodrigo | ko |
dc.date.accessioned | 2015-11-20T12:49:44Z | - |
dc.date.available | 2015-11-20T12:49:44Z | - |
dc.date.created | 2014-04-17 | - |
dc.date.created | 2014-04-17 | - |
dc.date.issued | 2010-08 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.97, no.5 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/201720 | - |
dc.description.abstract | P-type thin-film transistors (TFTs) using room temperature sputtered SnOx (x < 2) as a transparent oxide semiconductor have been produced. The SnOx films show p-type conduction presenting a polycrystalline structure composed with a mixture of tetragonal beta-Sn and alpha-SnOx phases, after annealing at 200 degrees C. These films exhibit a hole carrier concentration in the range of approximate to 10(16)-10(18) cm(-3); electrical resistivity between 10(1)-10(2) Omega cm; Hall mobility around 4.8 cm(2)/V s; optical band gap of 2.8 eV; and average transmittance approximate to 85% (400 to 2000 nm). The bottom gate p-type SnOx TFTs present a field-effect mobility above 1 cm(2)/V s and an ON/OFF modulation ratio of 10(3). (C) 2010 American Institute of Physics. [doi: 10.1063/1.3469939] | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | TIN OXIDE-FILMS | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.subject | OXIDATION | - |
dc.subject | TFTS | - |
dc.title | Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing | - |
dc.type | Article | - |
dc.identifier.wosid | 000281059500028 | - |
dc.identifier.scopusid | 2-s2.0-77955724774 | - |
dc.type.rims | ART | - |
dc.citation.volume | 97 | - |
dc.citation.issue | 5 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.3469939 | - |
dc.contributor.localauthor | Park, Sang-Hee Ko | - |
dc.contributor.nonIdAuthor | Fortunato, Elvira | - |
dc.contributor.nonIdAuthor | Barros, Raquel | - |
dc.contributor.nonIdAuthor | Barquinha, Pedro | - |
dc.contributor.nonIdAuthor | Figueiredo, Vitor | - |
dc.contributor.nonIdAuthor | Hwang, Chi-Sun | - |
dc.contributor.nonIdAuthor | Martins, Rodrigo | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | TIN OXIDE-FILMS | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | OXIDATION | - |
dc.subject.keywordPlus | TFTS | - |
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