Device reliability under electrical stress and photo response of oxide TFTs

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The stability of oxide TFTs has been the main focus of this research and is probably the most crucial requirement for the successful application to flat-panel displays. Although the high Fermi level of oxide semiconductors makes TFTs basically stable under electrical stress, the device reliability under diverse variations of electrical stress is affected by materials such as active semiconductors and gate insulators, processes for the formation of back/front channels and passivation layers, and device configurations among other things. How these factors affect the device reliability have been investigated and a review of the stability is presented. In addition, several categories of the light instability of oxide TFTs is presented and the origin is discussed.
Publisher
SOC INFORMATION DISPLAY
Issue Date
2010-10
Language
English
Article Type
Article
Keywords

THIN-FILM TRANSISTORS; BIAS STABILITY; TRANSPARENT; PERFORMANCE; IMPROVEMENT; MEMORY; PANEL

Citation

JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, v.18, no.10, pp.779 - 788

ISSN
1071-0922
DOI
10.1889/JSID18.10.779
URI
http://hdl.handle.net/10203/201713
Appears in Collection
MS-Journal Papers(저널논문)
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