DSpace at KOASAS
College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Oxide-Thin-Film-Transistor-Based Ferroelectric Memory Array

Cited 21 time in webofscience Cited 24 time in scopus
  • Hit : 319
  • Download : 0
Export
DC FieldValueLanguage
dc.contributor.authorKim, Byeong Hoonko
dc.contributor.authorByun, Chun Wonko
dc.contributor.authorYoon, Sung-Minko
dc.contributor.authorYang, Shin Hyukko
dc.contributor.authorJung, Soon-Wonko
dc.contributor.authorRyu, Min Kiko
dc.contributor.authorPark, Sang-Hee Koko
dc.contributor.authorHwang, Chi-Sunko
dc.contributor.authorCho, Kyoung-Ikko
dc.contributor.authorKwon, Oh-Sangko
dc.contributor.authorPark, Eun-Sukko
dc.contributor.authorOh, Him Chanko
dc.contributor.authorKim, Kyoung-Hwanko
dc.contributor.authorPark, Kee Chanko
dc.date.accessioned2015-11-20T12:46:57Z-
dc.date.available2015-11-20T12:46:57Z-
dc.date.created2014-04-17-
dc.date.created2014-04-17-
dc.date.issued2011-03-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.32, no.3, pp.324 - 326-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/201694-
dc.description.abstractA new ferroelectric memory array on a glass substrate has been developed using In-Ga-Zn-O (IGZO) thin-film transistors (TFTs). Each memory cell is composed of two normal IGZO TFTs and a ferroelectric TFT (FeTFT). Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] is employed as the gate dielectric layer of the FeTFT. All the fabrication processes were performed below 200 degrees C. The fabricated memory successfully demonstrated disturb-free write/readout operation. The current ratio between the 1 and 0 states is about 10(4).-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleOxide-Thin-Film-Transistor-Based Ferroelectric Memory Array-
dc.typeArticle-
dc.identifier.wosid000287658400034-
dc.identifier.scopusid2-s2.0-79951952324-
dc.type.rimsART-
dc.citation.volume32-
dc.citation.issue3-
dc.citation.beginningpage324-
dc.citation.endingpage326-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.identifier.doi10.1109/LED.2010.2096197-
dc.contributor.localauthorPark, Sang-Hee Ko-
dc.contributor.nonIdAuthorKim, Byeong Hoon-
dc.contributor.nonIdAuthorByun, Chun Won-
dc.contributor.nonIdAuthorYoon, Sung-Min-
dc.contributor.nonIdAuthorYang, Shin Hyuk-
dc.contributor.nonIdAuthorJung, Soon-Won-
dc.contributor.nonIdAuthorRyu, Min Ki-
dc.contributor.nonIdAuthorHwang, Chi-Sun-
dc.contributor.nonIdAuthorCho, Kyoung-Ik-
dc.contributor.nonIdAuthorKwon, Oh-Sang-
dc.contributor.nonIdAuthorPark, Eun-Suk-
dc.contributor.nonIdAuthorOh, Him Chan-
dc.contributor.nonIdAuthorKim, Kyoung-Hwan-
dc.contributor.nonIdAuthorPark, Kee Chan-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorDisturb-free-
dc.subject.keywordAuthorferroelectric memory-
dc.subject.keywordAuthorIn-Ga-Zn-O (IGZO)-
dc.subject.keywordAuthorthin-film transistor (TFT)-
Appears in Collection
MS-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 21 items in WoS Click to see citing articles in records_button

Display Simple Item Record

qr_code

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.


rss_1.0 rss_2.0 atom_1.0