Oxide-Thin-Film-Transistor-Based Ferroelectric Memory Array

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A new ferroelectric memory array on a glass substrate has been developed using In-Ga-Zn-O (IGZO) thin-film transistors (TFTs). Each memory cell is composed of two normal IGZO TFTs and a ferroelectric TFT (FeTFT). Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] is employed as the gate dielectric layer of the FeTFT. All the fabrication processes were performed below 200 degrees C. The fabricated memory successfully demonstrated disturb-free write/readout operation. The current ratio between the 1 and 0 states is about 10(4).
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2011-03
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.32, no.3, pp.324 - 326

ISSN
0741-3106
DOI
10.1109/LED.2010.2096197
URI
http://hdl.handle.net/10203/201694
Appears in Collection
MS-Journal Papers(저널논문)
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