Improved Stability of Atomic Layer Deposited ZnO Thin Film Transistor by Intercycle Oxidation

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By inserting H2O treatment steps during atomic layer deposition of a ZnO layer; the turn-on voltage shift from negative bias stress (NBS) under illumination was reduced considerably compared to that of a device that has a continuously grown ZnO layer without any treatment steps. Meanwhile, treatment steps without introducing reactive gases, and simply staying under a low working pressure, aggravated the instability under illuminated NBS due to an increase of oxygen vacancy concentration in the ZnO layer From the experiment results, additional oxidation of the ZnO channel layer is proven to be effective in improving the stability against illuminated NBS.
Publisher
ELECTRONICS TELECOMMUNICATIONS RESEARCH INST
Issue Date
2012-04
Language
English
Article Type
Article
Keywords

BIAS STABILITY; TRANSPARENT

Citation

ETRI JOURNAL, v.34, no.2, pp.280 - 283

ISSN
1225-6463
DOI
10.4218/etrij.12.0211.0186
URI
http://hdl.handle.net/10203/201661
Appears in Collection
MS-Journal Papers(저널논문)
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