Trap States of the Oxide Thin Film Transistor

Cited 7 time in webofscience Cited 0 time in scopus
  • Hit : 80
  • Download : 0
We investigated the temperature dependent recovery of the threshold voltage shift observed in both ZnO and indium gallium zinc oxide (IGZO) thin film transistors (TFTs) after application of gate bias and light illumination. Two types of recovery were observed for both the ZnO and IGZO TFTs; low temperature recovery (below 110 degrees C) which is attributed to the trapped charge and high temperature recovery (over 110 degrees C) which is related to the annihilation of trap states generated during stresses. From a comparison study of the recovery rate with the analysis of hydrogen diffusion isochronal annealing, a similar behavior was observed for both TFT recovery and hydrogen diffusion. This result suggests that hydrogen plays an important role in the generation and annihilation of trap states in oxide TFTs under gate bias or light illumination stresses. (C) 2013 The Japan Society of Applied Physics
Publisher
JAPAN SOC APPLIED PHYSICS
Issue Date
2013-10
Language
English
Article Type
Article
Keywords

BIAS STABILITY; ZNO; LIGHT

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.10

ISSN
0021-4922
DOI
10.7567/JJAP.52.10MA12
URI
http://hdl.handle.net/10203/201513
Appears in Collection
MS-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 7 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0