DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Gwang-Sik | ko |
dc.contributor.author | Kim, Seung-Hwan | ko |
dc.contributor.author | Kim, Jeong-Kyu | ko |
dc.contributor.author | Shin, Changhwan | ko |
dc.contributor.author | Park, Jin-Hong | ko |
dc.contributor.author | Saraswat, Krishna C. | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.contributor.author | Yu, Hyun-Yong | ko |
dc.date.accessioned | 2015-11-20T07:21:16Z | - |
dc.date.available | 2015-11-20T07:21:16Z | - |
dc.date.created | 2015-08-25 | - |
dc.date.created | 2015-08-25 | - |
dc.date.issued | 2015-08 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.36, no.8, pp.745 - 747 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/200622 | - |
dc.description.abstract | We demonstrate Fermi-level unpinning and contact resistance reduction by surface passivation using SF6 plasma treatment of a metal/germanium (Ge) contact. A specific contact resistivity (rho(c)) of 1.14 x 10(-3) Omega . cm(2) and 0.31 eV of Schottky barrier height is achieved for a Ti/SF6-treated n-type Ge (n-Ge) (N-d = 1 x 10(17) cm(-3)) contact, exhibiting 1700 times rho(c) reduction from a Ti/nontreated n-Ge contact. A convenient and effective passivation process of the Ge surface is presented to alleviate Fermi-level pinning at metal/Ge contact and lower source/drain contact resistance of Ge n-type field-effect transistors. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | INTERFACIAL LAYER | - |
dc.subject | RESISTIVITY | - |
dc.title | Surface Passivation of Germanium Using SF6 Plasma to Reduce Source/Drain Contact Resistance in Germanium n-FET | - |
dc.type | Article | - |
dc.identifier.wosid | 000358570300003 | - |
dc.identifier.scopusid | 2-s2.0-84937878158 | - |
dc.type.rims | ART | - |
dc.citation.volume | 36 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | 745 | - |
dc.citation.endingpage | 747 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2015.2440434 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Kim, Gwang-Sik | - |
dc.contributor.nonIdAuthor | Kim, Seung-Hwan | - |
dc.contributor.nonIdAuthor | Kim, Jeong-Kyu | - |
dc.contributor.nonIdAuthor | Shin, Changhwan | - |
dc.contributor.nonIdAuthor | Park, Jin-Hong | - |
dc.contributor.nonIdAuthor | Saraswat, Krishna C. | - |
dc.contributor.nonIdAuthor | Yu, Hyun-Yong | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Contact resistance | - |
dc.subject.keywordAuthor | Fermi-level unpinning | - |
dc.subject.keywordAuthor | germanium | - |
dc.subject.keywordAuthor | SF6 plasma | - |
dc.subject.keywordAuthor | surface passivation | - |
dc.subject.keywordPlus | INTERFACIAL LAYER | - |
dc.subject.keywordPlus | RESISTIVITY | - |
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