Showing results 5 to 7 of 7
H-Band Power Amplifiers in 65-nm CMOS by Adopting Output Power Maximized G(max)-Core and Transmission Line-Based Zero-Degree Power Networks Yun, Byeonghun; Park, Dae-Woong; Lee, Sang-Gug, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.58, no.11, pp.3089 - 3102, 2023-11 |
Large-signal modeling of InP/InGaAs single heterojunction bipolar transistors including thermal and impact ionization effects = 열효과와 Impact ionization 효과를 포함한 InP/InGaAs 단일 이종접합 바이폴라 트랜지스터 대신호 모델링link Kim, Tae-Ho; 김태호; et al, 한국과학기술원, 2002 |
Novel extraction method including self-heating and ambient temperature effects for a large-signal model of a HBT Park, HM; Koh, K; Hong, Songcheol, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.6, pp.1025 - 1035, 2002-12 |
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