Showing results 4 to 6 of 6
Influence of High-Pressure Annealing on Memory Properties of Hf0.5Zr0.5O2 Based 1T-FeRAM Yoon, Jae Seok; Tewari, Amit; Shin, Changhwan; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.40, no.7, pp.1076 - 1079, 2019-07 |
Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall Polarization Kuk, Songhyeon; Han, Seungmin; Lee, Dong Hyun; Kim, Bong Ho; Shim, Joonsup; Park, Min Hyuk; Han, Jae-Hoon; et al, IEEE ELECTRON DEVICE LETTERS, v.44, no.1, pp.36 - 39, 2023-01 |
Method to Achieve the Morphotropic Phase Boundary in HfxZr1-xO2 by Electric Field Cycling for DRAM Cell Capacitor Applications Kim, Seongho; Lee, Seung Hwan; Kim, Min Ju; Hwang, Wan Sik; Jin, Hyun Soo; Cho, Byung Jin, IEEE ELECTRON DEVICE LETTERS, v.42, no.4, pp.517 - 520, 2021-04 |
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