Browse "School of Electrical Engineering(전기및전자공학부)" by Subject hafnium oxide
Showing results 1 to 8 of 8
| Cubic-Structured HfO2 With Optimized Doping of Lanthanum for Higher Dielectric Constant He, Wei; Zhang, Lu; Chan, Daniel S. H.; Cho, BJ; Zhang, L; Cho, Byung Jin, IEEE ELECTRON DEVICE LETTERS, v.30, no.6, pp.623 - 625, 2009-06 |
| Dependence of chemical composition ratio on electrical properties of HfO2-A(2)O(3) gate dielectric Joo MS; Cho, Byung Jin; Yeo CC; Wu N; Yu HY; Zhu CX; Li MF; et al, JAPANESE JOURNAL OF APPLIED PHYSICS, v.42, no.3A, pp.220 - 222, 2003-03 |
| Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process Joo, MS; Cho, Byung Jin; Yeo, CC; Chan, DSH; Whoang, SJ; Mathew, S; Bera, LK; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.10, pp.2088 - 2094, 2003-10 |
| Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation Tan, YN; Chim, WK; Choi, WK; Joo, MS; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.53, no.4, pp.654 - 662, 2006-04 |
Interfacial Dipole Modulation Device With SiOX Switching Species Kim, Giuk; Kim, Taeho; Jeon, Sanghun, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.9, pp.57 - 60, 2021 |
| Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide-charge storage layer Tan, YN; Chim, WK; Cho, Byung Jin; Choi, WK, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.51, no.7, pp.1143 - 1147, 2004-07 |
| Pulse Switching Study on the HfZrO Ferroelectric Films With High Pressure Annealing Kim, Taeho; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.5, pp.1771 - 1773, 2018-05 |
| The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2 Goh, Youngin; Jeon, Sanghun, NANOTECHNOLOGY, v.29, no.33, 2018-08 |
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