Browse "School of Electrical Engineering(전기및전자공학부)" by Subject GAAS

Showing results 7 to 21 of 21

7
Low-noise AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor recessed by electron cyclotron resonance plasma etching

Lee, JH; Choi, HT; Lee, CW; Yoon, HS; Park, BS; Park, Chul Soon, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.34, no.2, pp.150 - 153, 1999-02

8
Meltback Etching and Regrowth of GaAs/AlGaAs in Liquid Phase Epitaxy for Fabrication of Microlens

G.S.Cho; S.H.Hahm; Kwon, Young Se, JOURNAL OF ELECTRONIC MATERIALS, v.22, no.4, pp.353 - 359, 1993

9
MICROSTRUCTURAL DEGRADATION DURING ZN DIFFUSION IN A GAINASP/INP HETEROSTRUCTURE - LAYER MIXING, MISFIT DISLOCATION GENERATION, AND ZN3P2 PRECIPITATION

Park, HyoHoon; LEE, KH; Lee, JeongYong; LEE, YT; LEE, EH; LEE, JY; HONG, SK; et al, JOURNAL OF APPLIED PHYSICS, v.72, no.9, pp.4063 - 4072, 1992-11

10
Optical TCAD on the Net: A tight-binding study of inter-band light transitions in self-assembled InAs/GaAs quantum dot photodetectors

Ryu, Hoon; Nam, Dukyun; Ahn, Bu-Young; Lee, JongSuk Ruth; Cho, Kumwon; Lee, Sunhee; Klimeck, Gerhard; et al, MATHEMATICAL AND COMPUTER MODELLING, v.58, no.1-2, pp.288 - 299, 2013-07

11
RESONANT INDIRECT FOWLER-NORDHEIM TUNNELING IN AL0.8GA0.2AS BARRIER

LU, SS; Lee, Kwyro; NATHAN, MI; WRIGHT, SL, APPLIED PHYSICS LETTERS, v.58, no.3, pp.266 - 268, 1991-01

12
Selective lateral etching of Al0.3Ga0.7As/GaAs heterojunction structure using the redox solution of I-2/KI

Kim, DH; Lee, Hee Chul, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.36, no.3A, pp.253 - 255, 1997-03

13
SELF-ALIGNED SHALLOW JUNCTION MJFET (METAL JUNCTION FET) FOR HIGHER TURN-ON AND BREAKDOWN VOLTAGES

JEON, BT; HAN, JH; Lee, Kwyro; Kwon, Young Se, IEEE ELECTRON DEVICE LETTERS, v.13, no.12, pp.630 - 632, 1992-12

14
Simulation Study of a Monolithic III-V/Si V-Groove Carrier Depletion Optical Phase Shifter

Kim, Sanghyeon; Kim, Younghyun; Ban, Yoojin; Pantouvaki, Marianna; Van Campenhout, Joris, IEEE JOURNAL OF QUANTUM ELECTRONICS, v.56, no.2, 2020-04

15
Studies on polycrystalline Cd0.96Zn0.04Te thin films prepared by vacuum evaporation

Sridharan, M; Narayandass, SK; Mangalaraj, D; Lee, Hee Chul, VACUUM, v.70, pp.511 - 522, 2003-04

16
Surface morphology of InGaAs on GaAs(100) by chemical beam epitaxy using unprecracked monoethylarsine, triethylgallium and trimethylindium

Park, SJ; Ro, JR; Ha, JS; Kim, SB; Park, HyoHoon; Lee, EH; Yi, JY; et al, SURFACE SCIENCE, v.350, no.1-3, pp.221 - 228, 1996-04

17
Theoretical comparison of (111) and (100) GaAs/AlGaAs p-type quantum well infrared photodetectors

Cho, TH; Kim, HS; Kwon, YS; Hong, Songcheol, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.35, no.4A, pp.2164 - 2167, 1996-04

18
Thermal Stability of ALD-HfO(2)/GaAs Pretreated with Trimethylaluminium

Byun, YC (Byun, Young-Chul); An, CH (An, Chee-Hong); Lee, Seok-Hee; Cho, MH (Cho, Mann-Ho); Kim, H (Kim, Hyoungsub), JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.159, no.1, pp.6 - 10, 2012

19
TRANSIENT CARRIER AND FIELD-DYNAMICS IN QUANTUM-WELL PARALLEL TRANSPORT - FROM THE BALLISTIC TO THE QUASI-EQUILIBRIUM REGIME

SHA, WJ; Rhee, June-Koo Kevin; NORRIS, TB; SCHAFF, WJ, IEEE JOURNAL OF QUANTUM ELECTRONICS, v.28, no.10, pp.2445 - 2455, 1992-10

20
Wave form reconstruction of photoconductive switch using minimum phase retrieval algorithm

Kim, W; Lee, J; Lee, J; Lee, H; Kim, Joung-Ho, APPLIED PHYSICS LETTERS, v.73, no.1, pp.73 - 75, 1998-07

21
X-ray diffraction and Raman scattering studies in B-10(+)-implanted Cd0.96Zn0.04Te thin films prepared by vacuum evaporation

Sridharan, M; Narayandass, SK; Mangalaraj, D; Lee, Hee Chul, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.14, pp.69 - 73, 2003-02

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